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The Online Electron Microscopy Platform makes electron microscopy education accessible by combining simulation-based practice with a range of educational content. Students learn how to operate electron microscopes by using virtual microscopes that precisely simulate the functions of real microscopes. Built as a web application, the platform can be used by an unlimited number of people and at any time. This platform reduces the time needed for training users to operate a real microscope. By preparing students in STEM disciplines to use electron microscopes, the system helps them acquire the skills they need to succeed in the modern workforce. 

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal–semiconductor interfaces in WS 2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a “generalized” Cu doping by using randomly distributed Cu atoms along the channel and (ii) a “localized” Cu doping by adapting an ultrathin Cu layer at the metal–semiconductor interface. Compared to the pristine WS 2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1–3 orders of magnitude, and consequently elevate electron mobilities by 5–7 times. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.